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SSM3K104TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switch Applications | |||
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SSM3K104TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K104TU
Power Management Switch Applications
High-Speed Switching Applications
⢠1.8 V drive
⢠Low ON-resistance:
Ron = 110 m⦠(max) (@VGS = 1.8 V)
Ron = 74 m⦠(max) (@VGS = 2.5 V)
Ron = 56 m⦠(max) (@VGS = 4.0 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
1
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDS
20
V
VGSS
± 12
V
ID
3.0
A
IDP
6.0
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
â55~150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on a ceramic board.
(25.4 mm à 25.4 mm à 0.8 t, Cu Pad: 645 mm2 )
Mounted on an FR4 board.
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
2
3
1: Gate
2: Source
UFM 3: Drain
UFM
JEDEC
â
JEITA
â
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS
V (BR) DSX
IDSS
ID = 1 mA, VGS = 0
ID = 1 mA, VGS = â12 V
VDS = 20 V, VGS = 0
20
â¯
â¯
V
12
â¯
â¯
â¯
â¯
1
μA
IGSS
VGS = ±12 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.4
â¯
1.0
V
âYfsâ
VDS = 3 V, ID = 2.0 A
(Note 3)
6
10
â¯
S
RDS (ON)
ID = 2.0 A, VGS = 4.0 V
ID = 1.0 A, VGS = 2.5 V
ID = 0.5 A, VGS = 1.8 V
(Note 3)
â¯
(Note 3)
â¯
(Note 3)
â¯
44
56
53
74
mΩ
70
110
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
320
â¯
pF
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
62
â¯
pF
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
51
â¯
pF
ton
toff
VDSF
VDD = 10 V, ID = 2 A,
VGS = 0~2.5 V, RG = 4.7 Ω
â¯
18
â¯
ns
â¯
14
â¯
ID = â3.0 A, VGS = 0 V
(Note 3) ⯠â0.85 â1.2
V
1
2007-11-01
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