SSM3K102TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K102TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K102TU
High Speed Switching Applications
• 1.8V drive
• Low on-resistance:
R_on = 154mΩ (max) (@V_GS = 1.8 V)
R_on = 99mΩ (max) (@V_GS = 2.5 V)
R_on = 71mΩ (max) (@V_GS = 4.0 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
2.6
A
5.2
Drain power dissipation
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm² )
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note3: Pulse test
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_D = 1 mA, V_GS = 0
I_D = 1 mA, V_GS = −12 V
V_DS = 20 V, V_GS = 0
20
⎯
⎯
V
10
⎯
⎯
⎯
⎯
1
μA
I_GSS
V_GS = ±12V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = 3 V, I_D = 1 mA
0.4
⎯
1.0
V
⏐Y_fs⏐
V_DS = 3 V, I_D = 1.0 A
(Note3) 3.6
6
⎯
S
R_{DS (ON)}
I_D = 1.0 A, V_GS = 4.0 V
I_D = 0.5 A, V_GS = 2.5 V
(Note3)
⎯
63
71
(Note3)
⎯
80
99
mΩ
I_D = 0.2 A, V_GS = 1.8 V
(Note3)
⎯
115 154
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
268
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
44
⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
34
⎯
pF
t_on
V_DD = 10 V, I_D = 0.25 A,
t_off
V_GS = 0~2.5 V, R_G = 4.7 Ω
⎯
9
⎯
ns
⎯
16
⎯
V_DSF
I_D = −2.6A, V_GS = 0 V
(Note3)
⎯ −0.85 −1.2
V
1
2007-11-01