SSM3K09FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU
High Speed Switching Applications
· Small package
· Low on resistance
: Ron = 0.7 Ω (max) (@VGS = 10 V)
: Ron = 1.2 Ω (max) (@VGS = 4 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
400
mA
800
Drain power dissipation (Ta = 25°C)
P_D (Note1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
-55~150
°C
Note1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm² ´ 3) Figure 1.
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Marking
3
DJ
Equivalent Circuit
(top view)
3
Figure 1: 25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 0.6 mm² ´ 3
0.6 mm
1.0 mm
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-24