SSM3K05FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K05FU
High Speed Switching Applications
• Small package
• Low on resistance : R_on = 0.8 Ω max (@V_GS = 4 V)
: R_on = 1.2 Ω max (@V_GS = 2.5 V)
• Low gate threshold voltage
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
20
V
Gate-source voltage
V_GSS
±12
V
Drain current
DC
Pulse
I_D
400
mA
I_DP
800
Drain power dissipation (Ta = 25°C)
P_D
150
mW
(Note 1)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.6 mm² × 3)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01