SSM3K04FV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K04FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FV
High Speed Switching Applications
Unit: mm
• With built-in gate-source resistor: R_GS = 1 MΩ (typ.)
• 2.5 V gate drive
• High input impedance
• Low gate threshold voltage: V_th = 0.7~1.3 V
• Optimum for high-density mounting in small packages
Absolute Maximum Ratings (Ta = 25°C)
1.2±0.05
0.8±0.05
1
3
2
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
20
V
Gate-source voltage
V_GSS
10
V
DC drain current
I_D
100
mA
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
1. Gate
2. Source
3. Drain
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2L1B
Weight: 1.5 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
3
DC
1
2
Equivalent Circuit
3
RGS
1
2
1
2007-11-01