SSM3K04FS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switch Applications

SSM3K04FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FS
High Speed Switch Applications
Unit: mm
• With built-in gate-source resistor: R_GS = 1 MΩ (typ.)
• 2.5 V gate drive
• Low gate threshold voltage: V_th = 0.7~1.3 V
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
20
V
10
V
100
mA
100
mW
150
°C
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2H1B
absolute maximum ratings.
Weight: 2.4 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Equivalent Circuit
1
2007-11-01