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SSM3K04FE_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications | |||
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SSM3K04FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FE
High Speed Switching Applications
⢠With built-in gate-source resistor: RGS = 1 M⦠(typ.)
⢠2.5 V gate drive
⢠Low gate threshold voltage: Vth = 0.7~1.3 V
⢠Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
20
V
VGSS
10
V
ID
100
mA
PD
100
mW
Tch
150
°C
Tstg
â55~150
°C
JEDEC
â
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
â
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2HA1B
reliability significantly even if the operating conditions (i.e.
Weight: 2.3 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
1
2007-11-01
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