SSM3K03FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K03FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03FE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· 2.5 V gate drive
· High input impedance
· Low gate threshold voltage: Vth = 0.7~1.3 V
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
Marking
Rating
Unit
20
V
10
V
100
mA
100
mW
150
°C
-55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1B
Weight: 2.3 mg (typ.)
Equivalent Circuit
1
2003-03-27