SSM3K02F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02F
SSM3K02F
High Speed Switching Applications
· Small package
· Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V)
: Ron = 250 mΩ (max) (VGS = 2.5 V)
· Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V_DS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
Marking
Rating
Unit
30
V
±10
V
1.0
A
2.0
200
mW
150
°C
-55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27