SSM3K01F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01F
SSM3K01F
High Speed Switching Applications
Unit: mm
• Small package
• Low on resistance : Ron = 120 mΩ (max) (V_GS = 4 V)
: Ron = 150 mΩ (max) (V_GS = 2.5 V)
• Low gate threshold voltage: V_th = 0.6~1.1 V (V_DS = 3 V, I_D = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
30
V
Gate-source voltage
V_GSS
±10
V
Drain current
DC
Pulse
I_D
1.3
A
I_DP
2.6
Drain power dissipation
P_D
200
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
JEDEC
TO-236MOD
high temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1F
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01