SSM3J56MFV_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM3J56MFV
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J56MFV
○ Load Switching Applications
• 1.2 V drive
• Low ON-resistance: R_DS(ON) = 390 mΩ (max) (@V_GS = -4.5 V)
R_DS(ON) = 480 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 660 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 900 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 4000 mΩ (max) (@V_GS = -1.2 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
V_DSS
-20
V
V_GSS
±8
V
I_D (Note 1)
-800
mA
I_DP (Note 1)
-1600
P_D (Note 2)
150
P_D (Note 3)
500
mW
t < 5s
800
T_ch
150
°C
T_stg
−55 to 150
°C
VESM
1.Gate
2.Source
3.Drain
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in temperature, _JEITA
―
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
TOSHIBA
2-1L1B
are within the absolute maximum ratings.
Weight: 1.5mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm²)
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
Equivalent Circuit (top view)
3
PW
1
2
1
2
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R_{th (ch-a)} and Power dissipation P_D vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration.
Start of commercial production
2011-05
1
2014-03-01