SSM3J36TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switches

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J36TU
SSM3J36TU
○ Power Management Switches
• 1.5-V drive
• Low ON-resistance: R_on = 3.60 Ω (max) (@V_GS = -1.5 V)
: R_on = 2.70 Ω (max) (@V_GS = -1.8 V)
: R_on = 1.60 Ω (max) (@V_GS = -2.8 V)
: R_on = 1.31 Ω (max) (@V_GS = -4.5 V)
Absolute Maximum Ratings (Ta = 25 °C)
Unit: mm
2.1±0.1
1.7±0.1
1
Characteristics
Symbol
Rating
Unit
2
3
Drain-source voltage
V_DSS
-20
V
Gate-source voltage
V_GSS
±8
V
Drain current
DC
I_D
-330
mA
Pulse
I_DP
-660
Drain power dissipation
P_D (Note1)
500
mW
P_D (Note2)
800
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
UFM
1: Gate
2: Source
Note: Using continuously under heavy loads (e.g. the application of
3: Drain
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2U1A
Please design the appropriate reliability upon reviewing the
Weight: 6.6 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Note2: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm² )
Marking
3
Equivalent Circuit (top view)
3
PX
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Usage Considerations
Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below −1 mA for the
SSM3J36TU). Then, for normal switching operation, V_GS(on) must be higher than V_th, and V_GS(off) must be lower than
V_th. This relationship can be expressed as: V_GS(off) < V_th < V_GS(on). Take this into consideration when using the device.
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2008-06-11