SSM3J36FS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switches

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J36FS
SSM3J36FS
○ Power Management Switches
• 1.5-V drive
• Low ON-resistance: R_on = 3.60 Ω (max) (@V_GS = -1.5 V)
: R_on = 2.70 Ω (max) (@V_GS = -1.8 V)
: R_on = 1.60 Ω (max) (@V_GS = -2.8 V)
: R_on = 1.31 Ω (max) (@V_GS = -4.5 V)
Absolute Maximum Ratings (Ta = 25 °C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DSS
-20
V
V_GSS
±8
V
I_D
-330
mA
I_DP
-660
P_D (Note1)
150
mW
T_ch
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.36 mm² ×3)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
Marking
3
Equivalent Circuit (top view)
3
PX
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Usage Considerations
Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below −1 mA for the
SSM3J36FS). Then, for normal switching operation, V_GS(on) must be higher than V_th, and V_GS(off) must be lower than
V_th. This relationship can be expressed as: V_GS(off) < V_th < V_GS(on).
Take this into consideration when using the device.
1
2008-06-11