SSM3J334R Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM3J334R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J334R
○Power Management Switch Applications
• Low ON-resistance: R_DS(ON) = 71 mΩ (max) (@V_GS = -10 V)
R_DS(ON) = 105 mΩ (max) (@V_GS = -4.5 V)
R_DS(ON) = 136 mΩ (max) (@V_GS = -4.0 V)
0.05　M A
0.42^+-00..0058
3
Unit: mm
+0.08
0.17 _-0.07
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
-30
V
Gate-Source voltage
V_GSS
± 20
V
Drain current
DC
I_D (Note 1)
-4
A
Pulse
I_DP (Note 1,2)
-16
Power dissipation
P_D (Note 3)
1
W
t < 10s
2
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
1
0.95
2
0.95
2.9±0.2
A
SOT-23F
1: Gate
2: Source
3: Drain
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3Z1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 11 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: PW ≤ 1ms, Duty ≤ 1％
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
Equivalent Circuit (Top View)
3
KFL
1
2
1
2
Start of commercial production
2010-08
1
2014-03-01