SSM3J332R Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM3J332R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J332R
○Power Management Switch Applications
Unit: mm
• 1.8-V drive
• Low ON-resistance: R_DS(ON) = 144 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 72.0 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 50.0 mΩ (max) (@V_GS = -4.5 V)
R_DS(ON) = 42.0 mΩ (max) (@V_GS = -10 V)
0.05　M A
0.42^+-00..0058
3
+0.08
0.17 _-0.07
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
1
0.95
2
0.95
2.9±0.2
A
Drain-Source voltage
Gate-Source voltage
V_DSS
-30
V
V_GSS
± 12
V
Drain current
DC
I_D (Note 1)
-6.0
A
Pulse
I_DP (Note 1,2)
-24.0
Power dissipation
P_D (Note 3)
1
W
t < 10s
2
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
SOT-23F
JEDEC
1: Gate
2: Source
3: Drain
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
―
2-3Z1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 11 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: PW ≤ 10μs,Duty ≤ 1%
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
Equivalent Circuit (Top View)
3
KFJ
1
2
1
2
1
2010-11-11