SSM3J331R Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Power Management Switches

MOSFETs Silicon P-Channel MOS (U-MOS)
SSM3J331R
1. Applications
• Power Management Switches
2. Features
(1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance
: R_DS(ON) = 150 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 100 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 75 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 55 mΩ (max) (@V_GS = -4.5 V)
3. Packaging and Pin Configuration
SOT-23F
SSM3J331R
1. Gate
2. Source
3. Drain
1
2012-07-19
Rev.3.0