SSM3J325F Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

SSM3J325F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J325F
○ Power Management Switch Applications
Unit: mm
• 1.5-V drive
• Low ON-resistance: R_DS(ON) = 311 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 231 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 179 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 150 mΩ (max) (@V_GS = -4.5 V)
+0.5
2.5-0.3
+0.25
1.5-0.15
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DSS
-20
V
Gate-source voltage
V_GSS
±8
V
Drain current
DC
I_D (Note 1)
-2.0
A
Pulse
I_DP (Note 1)
-4.0
Drain power dissipation
P_D (Note 2)
600
mW
t = 1s
1200
Channel temperature
T_ch
150
°C
S-MINI
1.Gate
2.Source
3.Drain
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
SC-59
2-3F1F
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 12 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
Equivalent Circuit
3
KFE
1
2
1
2
1
2009-12-02