SSM3J317T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications High-Speed Switching Applications

SSM3J317T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J317T
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: R_on = 306 mΩ (max) (@V_GS = -1.8 V)
: R_on = 144 mΩ (max) (@V_GS = -2.8 V)
: R_on = 107 mΩ (max) (@V_GS = -4.5 V)
+0.2
2.8-0.3
+0.2
1.6-0.1
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
-20
V
１
２
３
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D (Note 1)
-3.6
A
Pulse
I_DP (Note 1)
-7.2
Drain power dissipation
P_D (Note 2)
700
mW
t = 5s
1400
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TSM
1: Gate
2: Source
3: Drain
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEDEC
―
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
JEITA
―
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
TOSHIBA
2-3S1A
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Weight: 10 mg (typ.)
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note3: Pulse test
V _{(BR) DSS} I_D = -1 mA, V_GS = 0 V
-20
V _{(BR) DSX} I_D = -1 mA, V_GS = 8 V
-12
I_DSS
V_DS = -20 V, V_GS = 0 V
⎯
I_GSS
V_GS = ±8 V, V_DS = 0 V
⎯
V_th
V_DS = -3 V, I_D = -1 mA
-0.3
|Y_fs|
V_DS = -3 V, I_D = -1.0 A (Note 3) 2.2
I_D = -1.0 A, V_GS = -4.5 V (Note 3) ⎯
R_{DS (ON)} I_D = -0.75 A, V_GS = -2.8 V (Note 3) ⎯
I_D = -0.5 A, V_GS = -1.8 V (Note 3) ⎯
C_iss
⎯
C_oss
V_DS = -10 V, V_GS = -0 V, f = 1 MHz ⎯
C_rss
⎯
Q_g
⎯
V_DS = -10 V, I_DS= -3.6 A
Q_gs
V_GS = -4 V
⎯
Q_gd
⎯
t_on
V_DD = -10 V, I_D = -1.0 A
⎯
t_off
V_GS = 0 to -2.5 V, R_G = 4.7 Ω
⎯
V_DSF
I_D = 3.6 A, V_GS = 0 V
(Note 3) ⎯
1
Typ.
Max Unit
⎯
⎯
V
⎯
⎯
⎯
-10 μA
⎯
±1
μA
⎯
-1.0 V
4.4
⎯
S
83
107
107
144 mΩ
170
306
390
⎯
67
⎯
pF
55
⎯
9.6
⎯
6.6
⎯
nC
3.0
⎯
17
⎯
ns
19.5
⎯
0.9
1.2
V
2008-10-22