SSM3J305T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications

SSM3J305T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J305T
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
R_on = 477 mΩ (max) (@V_GS = −4 V)
R_on = 237 mΩ (max) (@V_GS = −10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DS
−30
V
Gate–source voltage
V_GSS
± 20
V
Drain current
DC
I_D
Pulse
I_DP
−1.7
A
−3.4
Drain power dissipation
P_{D (Note 1)}
700
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_on
t_off
V_DSF
Test Condition
I_D = −1 mA, V_GS = 0
I_D = −1 mA, V_GS = + 20 V
V_DS = −30 V, V_GS = 0
V_GS = ±16 V, V_DS = 0
V_DS = −5 V, I_D = −1 mA
V_DS = −5 V, I_D =− 0.65 A
I_D = −0.65 A, V_GS = −10 V
I_D = −0.4 A, V_GS = −4 V
(Note 2)
(Note 2)
(Note 2)
V_DS = −15 V, V_GS = 0, f = 1 MHz
V_DS = −15 V, I_DS= −1.7 A
V_GS = −4 V
V_DD = −15 V, I_D = −0.65 A,
V_GS = 0 to −4 V, R_G = 10 Ω
I_D = 1.7 A, V_GS = 0 V
(Note 3)
Min
−30
−15
⎯
⎯
−1.2
0.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.5
177
357
137
39
20
1.3
0.7
0.6
15
14
0.85
Max
⎯
⎯
−1
±1
−2.6
⎯
237
477
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1
2007-11-01