SSM3J304T_10 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications High-Speed Switching Applications

SSM3J304T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J304T
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: R_DS(ON) = 297 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 168 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 127 mΩ (max) (@V_GS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
V_DS
-20
V
V_GSS
±8
V
DC
I_D
Pulse
I_DP
-2.3
A
-4.6
P_D (Note 1)
700
mW
T_ch
150
°C
T_stg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
TOSHIBA
―
2-3S1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 10 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
JJ2
1
2
Equivalent Circuit (top view)
3
1
2
1
2010-01-26