SSM3J304T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications

SSM3J304T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J304T
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8 V drive
• Low ON-resistance: R_on = 297 mΩ (max) (@V_GS = -1.8 V)
R_on = 168 mΩ (max) (@V_GS = -2.5 V)
R_on = 127 mΩ (max) (@V_GS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DS
-20
V
Gate-source voltage
V_GSS
±8
V
Drain current
DC
I_D
Pulse
I_DP
-2.3
A
-4.6
Drain power dissipation
P_D (Note 1)
700
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
TOSHIBA
―
2-3S1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 10 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = -1 mA, V_GS = 0
V _{(BR) DSX} I_D = -1 mA, V_GS = +8 V
-20
⎯
⎯
V
-12
⎯
⎯
I_DSS
V_DS = -20 V, V_GS = 0
⎯
⎯
-10
μA
I_GSS V_GS = ±8 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = -3 V, I_D = -1 mA
-0.3
⎯
-1.0
V
⏐Y_fs⏐ V_DS = -3 V, I_D = -1 A
(Note 2) 2.4
4
⎯
S
I_D = -1.0 A, V_GS = -4 V
(Note 2) ⎯
88
127
R_{DS (ON)} I_D = -0.5 A, V_GS = -2.5 V
(Note 2) ⎯
120 168 mΩ
I_D = -0.2 A, V_GS = -1.8 V
(Note 2) ⎯
172 297
C_iss
⎯
335
⎯
C_oss
V_DS = -10 V, V_GS = 0, f = 1 MHz
⎯
70
⎯
pF
C_rss
⎯
56
⎯
t_on
V_DD = -10 V, I_D = -1A,
t_off
V_GS = 0 ~ -2.5 V, R_G = 4.7 Ω
⎯
20
⎯
ns
⎯
20
⎯
V_DSF I_D = 2.3 A, V_GS = 0
(Note 2)
⎯
0.85 1.2
V
1
2007-11-01