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SSM3J16TE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications | |||
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16TE
High Speed Switching Applications
Analog Switch Applications
SSM3J16TE
⢠Small package
⢠Low on-resistance
: Ron = 8 Ω (max) (@VGS = â4 V)
: Ron = 12 Ω (max) (@VGS = â2.5 V)
: Ron = 45 Ω (max) (@VGS = â1.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP
PD
Tch
Tstg
â20
V
±10
V
â100
mA
â200
100
mW
150
°C
â55~150
°C
1: Gate
2: Source
3: Drain
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
â
high temperature/current/voltage and the significant change in
JEITA
â
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-1B1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
3
Equivalent Circuit (top view)
3
DT
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
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