SSM3J16CT Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

SSM3J16CT
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16CT
High Speed Switching Applications
Analog Switch Applications
Unit: mm
• Small package
• Low on-resistance
: R_on = 8 Ω (max) (@V_GS = −4 V)
: R_on = 12 Ω (max) (@V_GS = −2.5 V)
: R_on = 45 Ω (max) (@V_GS = −1.5 V)
0. 6 ±0 . 05
0. 5 ±0 . 03
３
Absolute Maximum Ratings (Ta = 25°C)
１
２
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
−20
V
0 .3 5 ±0 .02
0 .1 5 ± 0 .0 3
0 .0 5 ± 0 .0 3
Gate-Source voltage
V_GSS
±10
V
Drain current
DC
Pulse
I_D
−100
mA
I_DP
−200
Drain power dissipation (Ta = 25°C) P_D (Note 1)
100
mW
Channel temperature
T_ch
150
°C
CST3
Storage temperature range
T_stg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-1J1B
Weight :0.75mg
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(10 mm × 10 mm × 1.0 t, Cu Pad: 100 mm²)
Marking (Top View)
Pin Condition (Top View)
Equivalent Circuit
Polarity mark
Polarity mark (on the top)
3
1
S2
3
2
Handling Precaution
1. Gate
2. Source
3. Drain
*Electrodes: On the bottom
1
2
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected
against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
1
2007-11-01