SSM3J13T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch
High Speed Switching Applications
SSM3J13T
Unit: mm
· Small Package
· Low on Resistance: Ron = 70 mΩ (max) (@VGS = −4 V)
: Ron = 95 mΩ (max) (@VGS = −2.5 V)
· Low Gate Threshold Voltage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
-12
V
V_GSS
±8
V
I_D
-3.0
I_DP
(Note 2)
-6.0
A
P_D
(Note 1)
1.25
W
T_ch
150
°C
T_stg
-55~150
°C
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm², t = 10 s)
Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
KDH
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account
1
2002-03-27