SSM3J133TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM3J133TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J133TU
○ Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: R_DS(ON) = 88.4 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 56.0 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 39.7 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 29.8 mΩ (max) (@V_GS = -4.5 V)
Unit: mm
2.1±0.1
1.7±0.1
1
Absolute Maximum Ratings (Ta = 25°C)
2
3
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
-20
V
Gate-source voltage
V_GSS
±8
V
Drain current
DC
I_D (Note1)
-5.5
A
Pulse
I_DP (Note1)
-11.0
power dissipation
Channel temperature
Storage temperature range
P_D (Note2)
500
mW
t<1s
1000
T_ch
150
°C
T_stg
−55 to 150
°C
UFM
1: Gate
2: Source
3: Drain
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2U1A
operating temperature/current/voltage, etc.) are within the
weight: 6.6 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: The channel temperature should not exceed 150°C during use.
Note2: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
Equivalent Circuit (Top view)
3
JJL
1
2
1
2
Start of commercial production
2011-02
1
2014-03-01