SSM3J130TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

SSM3J130TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J130TU
○ Power Management Switch Applications
• 1.5 V drive
• Low ON-resistance:R_DS(ON) = 63.2 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 41.1 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 31.0 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 25.8 mΩ (max) (@V_GS = -4.5 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
-20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D
Pulse
I_DP
-4.4
A
-8.8
Power dissipation
P_D (Note 1)
800
mW
P_D (Note 2)
500
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
1
2
3
UFM
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Marking
3
Equivalent Circuit (top view)
3
JJC
1
2
1
2
Start of commercial production
2009-01
1
2014-03-01