SSM3J129TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)

SSM3J129TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)
SSM3J129TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5 V drive
• Low ON-resistance R_on = 137mΩ (max) (@V_GS = -1.5 V)
R_on = 88mΩ (max) (@V_GS = -1.8 V)
R_on = 62mΩ (max) (@V_GS = -2.5 V)
R_on = 46mΩ (max) (@V_GS = -4.5 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DSS
-20
V
V_GSS
±8
V
I_D (Note 1)
-4.6
A
I_DP (Note 1)
-9.2
P_D (Note 2)
500
mW
t=10s
1000
T_ch
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2
3
UFM
1:Gate
2:Source
3:Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6mg (typ.)
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
Equivalent Circuit (top view)
3
JJE
1
2
1
2
1
2008-09-30