SSM3J120TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type Power Management Switch Applications High-Current Switching Applications

SSM3J120TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU
○ Power Management Switch Applications
○ High-Current Switching Applications
• 1.5 V drive
• Low on-resistance
R_on = 140 mΩ (max) (@V_GS = -1.5 V)
R_on = 78 mΩ (max) (@V_GS = -1.8 V)
R_on = 49 mΩ (max) (@V_GS = -2.5 V)
R_on = 38 mΩ (max) (@V_GS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
-20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D
Pulse
I_DP
-4.0
A
-8.0
Drain power dissipation
P_D (Note 1)
800
mW
P_D (Note 2)
500
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55~150
°C
UFM
Unit: mm
2.1±0.1
1.7±0.1
1
2
3
1. Gate
2. Source
3. Drain
Note: Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2U1A
Weight: 6.6mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm²)
Note 2 : Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = −1 mA, V_GS = 0
V _{(BR) DSX} I_D = −1 mA, V_GS = +8 V
−20
⎯
⎯
V
−12
⎯
⎯
I_DSS V_DS = −20 V, V_GS = 0
⎯
⎯ −10 μA
I_GSS V_GS = ±8 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = −3 V, I_D = −1 mA
−0.3
⎯ −1.0
V
⏐Y_fs⏐ V_DS = -3 V, I_D = -2.0 A
(Note 3)
6.1 12.1 ⎯
S
I_D = -3.0 A, V_GS = -4.0 V
(Note 3)
⎯
28
38
R_{DS (ON)} ^{ID = -2.0 A, VGS = -2.5 V}
(Note 3)
⎯
34
49
mΩ
I_D = -1.0 A, V_GS = -1.8 V
(Note 3)
⎯
47
78
I_D = -0.3 A, V_GS = -1.5 V
(Note 3)
⎯
60 140
C_iss
C_oss
C_rss
V_DS = −10 V, V_GS = 0
f = 1 MHz
⎯ 1484 ⎯
pF
⎯
185
⎯
pF
⎯
169
⎯
pF
t_on
V_DD = −10 V, I_D = −2.0 A
t_off
V_GS = 0 ~ −2.5 V, R_G = 4.7 Ω
⎯
67
⎯
ns
⎯
92
⎯
1
2007-11-01