SSM3J117TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications

SSM3J117TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J117TU
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
R_on = 225 mΩ (max) (@V_GS = −4 V)
R_on = 117 mΩ (max) (@V_GS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
−30
V
V_GSS
± 20
V
I_D
−2
A
I_DP
−4
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55 to 150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm² )
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS}
V _{(BR) DSX}
I_D = −1 mA, V_GS = 0
I_D = −1 mA, V_GS = +20 V
−30
⎯
⎯
V
−15
⎯
⎯
I_DSS
V_DS = −30 V, V_GS = 0
⎯
⎯
−1
μA
I_GSS
V_GS = ±16 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = −5 V, I_D = −1 mA
−1.2
⎯
−2.6
V
⏐Y_fs⏐
V_DS = −5 V, I_D =− 1 A
(Note 3) 1.6
3.1
⎯
S
R_{DS (ON)}
I_D = −1 A, V_GS = −10 V
I_D = −0.5 A, V_GS = −4 V
(Note 3)
⎯
80
117
mΩ
(Note 3)
⎯
160 225
C_iss
V_DS = −15 V, V_GS = 0, f = 1 MHz
⎯
280
⎯
pF
C_oss
V_DS = −15 V, V_GS = 0, f = 1 MHz
⎯
80
⎯
pF
C_rss
V_DS = −15 V, V_GS = 0, f = 1 MHz
⎯
45
⎯
pF
t_on
V_DD = −15 V, I_D = −1 A,
t_off
V_GS = 0 to −4 V, R_G = 10 Ω
⎯
16
⎯
ns
⎯
35
⎯
V_DSF
I_D = 2 A, V_GS = 0 V
(Note 3) ⎯
0.8
1.2
V
1
2007-11-01