SSM3J115TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications

SSM3J115TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J115TU
High-Speed Switching Applications
Power Management Switch Applications
• 1.5 V drive
• Low ON-resistance:
R_on = 353 mΩ (max) (@V_GS = −1.5 V)
R_on = 193 mΩ (max) (@V_GS = −1.8 V)
R_on = 125 mΩ (max) (@V_GS = −2.5 V)
R_on = 98 mΩ (max) (@V_GS = −4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
−20
V
V_GSS
±8
V
I_D
−2.2
A
I_DP
−4.4
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55~150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
1
2
3
1: Gate
2: Source
UFM ^{3: Drain}
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 3: Pulse test
Symbol
Test Conditions
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_oss
C_rss
t_on
t_off
V_DSF
I_D = −1 mA, V_GS = 0
I_D = −1 mA, V_GS = +8 V
V_DS = −20 V, V_GS = 0
V_GS = ±8 V, V_DS = 0
V_DS = −3 V, I_D = −1 mA
V_DS = −3 V, I_D = − 0.9 A
(Note 3)
I_D = −1.0 A, V_GS = −4.0 V
(Note 3)
I_D = −1.0 A, V_GS = −2.5 V
I_D = −1.0 A, V_GS = −1.8 V
I_D = −0.1 A, V_GS = −1.5 V
(Note 3)
(Note 3)
(Note 3)
V_DS = −10 V, V_GS = 0, f = 1 MHz
V_DS = −10 V, V_GS = 0, f = 1 MHz
V_DS = −10 V, V_GS = 0, f = 1 MHz
V_DD = −10 V, I_D = −0.9 A,
V_GS = 0~−2.5 V, R_G = 4.7 Ω
I_D = 2.2 A, V_GS = 0 V
(Note 3)
Min
−20
−12
⎯
⎯
−0.3
2.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
5.4
77
84
111
126
568
75
67
29
39
0.8
Max
⎯
⎯
−10
±1
−1.0
⎯
98
125
193
353
⎯
⎯
⎯
⎯
⎯
1.2
Unit
V
μA
μA
V
S
mΩ
pF
pF
pF
ns
V
1
2007-11-01