SSM3J114TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications Power Management Switch Applications

SSM3J114TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J114TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5 V drive
• Low on-resistance
R_on = 526 mΩ (max) (@ V_GS = -1.5 V)
R_on = 321 mΩ (max) (@ V_GS = -1.8 V)
R_on = 199 mΩ (max) (@ V_GS = -2.5 V)
R_on = 149 mΩ (max) (@ V_GS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
1
2
3
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
-20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D
Pulse
I_DP
-1.8
A
-3.6
Drain power dissipation
P_D (Note 1)
800
mW
P_D (Note 2)
500
Channel temperature
T_ch
150
°C
UFM
1. Gate
2. Source
3. Drain
Storage temperature
T_stg
−55 ~ 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time Turn-on time
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = −1 mA, V_GS = 0
V _{(BR) DSX} I_D = −1 mA, V_GS = +8 V
−20
⎯
⎯
V
−12
⎯
⎯
I_DSS V_DS = −20 V, V_GS = 0
⎯
⎯ −10 μA
I_GSS V_GS = ± 8 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = −3 V, I_D = −1 mA
−0.3
⎯ −1.0
V
⏐Y_fs⏐ V_DS = -3 V, I_D = -0.6 A
(Note 3)
1.9 3.9
⎯
S
I_D = -0.6 A, V_GS = -4.0 V
(Note 3) ⎯
100 149
R_{DS (ON)} ^{ID = -0.6 A, VGS = -2.5 V}
I_D = -0.6 A, V_GS = -1.8 V
(Note 3) ⎯
(Note 3) ⎯
133 199
mΩ
183 321
I_D = -0.1 A, V_GS = -1.5 V
(Note 3) ⎯
220 526
C_iss
C_oss
C_rss
V_DS = −10 V, V_GS = 0
f = 1 MHz
⎯
331
⎯
pF
⎯
48
⎯
pF
⎯
39
⎯
pF
t_on
V_DD = −10 V, I_D = −0.6 A
⎯
19
⎯
ns
1
2007-11-01