|
SSM3J113TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications | |||
|
SSM3J113TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J113TU
High Speed Switching Applications
⢠2.0V drive
⢠Low on-resistance: Ron = 449m⦠(max) (@VGS = â2.0 V)
Ron = 249m⦠(max) (@VGS = â2.5 V)
Ron = 169m⦠(max) (@VGS = â4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDS
â20
V
VGSS
± 12
V
ID
â1.7
A
IDP
â3.4
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm à 25.4 mm à 0.8 mm, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
â
JEITA
â
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note3: Pulse test
Symbol
Test Conditions
Min Typ. Max Unit
V (BR) DSS
V (BR) DSX
IDSS
ID = â1 mA, VGS = 0
ID = â1 mA, VGS = +12V
VDS = â20 V, VGS = 0
â20
â¯
â¯
V
â8
â¯
â¯
â¯
â¯
â1
μA
IGSS
VGS = ±12V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = â3 V, ID = â0.1 mA
â0.5
â¯
â1.1
V
âYfsâ
VDS = â3 V, ID =â 0.65 A
(Note3) 1.3
2.7
â¯
S
ID = â0.65 A, VGS = â4.0 V (Note3)
â¯
129 169
RDS (ON) ID = â0.65 A, VGS = â2.5 V (Note3)
â¯
189 249 mΩ
ID = â0.65 A, VGS = â2.0 V (Note3)
â¯
249 449
Ciss
VDS = â10 V, VGS = 0, f = 1 MHz
â¯
370
â¯
pF
Coss
VDS = â10 V, VGS = 0, f = 1 MHz
â¯
116
â¯
pF
Crss
VDS = â10 V, VGS = 0, f = 1 MHz
â¯
73
â¯
pF
ton
VDD = â10 V, ID = â0.65 A,
toff
VGS = 0~â2.5 V, RG = 4.7 Ω
â¯
33
â¯
ns
â¯
47
â¯
VDSF
ID = 1.7 A, VGS = 0 V
(Note3) â¯
0.77 1.2
V
1
2007-11-01
|
▷ |