SSM3J110TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

SSM3J110TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J110TU
High Speed Switching Applications
• 1.8V drive
• Low on-resistance:
R_on = 240mΩ (max) (@V_GS = −1.8 V)
R_on = 145mΩ (max) (@V_GS = −2.5 V)
R_on = 94mΩ (max) (@V_GS = −4.0 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
1
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DS
−12
V
V_GSS
±8
V
I_D
−2.3
A
I_DP
−4.6
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm² )
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
2
3
UFM
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note3: Pulse test
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_D = −1 mA, V_GS = 0
I_D = −1 mA, V_GS = +8 V
V_DS = −12 V, V_GS = 0
−12
⎯
⎯
V
−4
⎯
⎯
⎯
⎯
−10
μA
I_GSS
V_GS = ±8V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = −3 V, I_D = −1 mA
−0.3
⎯
−1.0
V
⏐Y_fs⏐
V_DS = −3 V, I_D =− 1 A
(Note3) 2.7
4.5
⎯
S
I_D = −1.0 A, V_GS = −4.0 V
(Note3)
⎯
72
94
R_{DS (ON) ID = −0.75 A, VGS = −2.5 V (Note3)}
⎯
100
145
mΩ
I_D = −0.3 A, V_GS = −1.8 V
(Note3)
⎯
140 240
C_iss
V_DS = −10 V, V_GS = 0, f = 1 MHz
⎯
550
⎯
pF
C_oss
V_DS = −10 V, V_GS = 0, f = 1 MHz
⎯
170
⎯
pF
C_rss
V_DS = −10 V, V_GS = 0, f = 1 MHz
⎯
155
⎯
pF
t_on
V_DD = −10 V, I_D = −0.75 A,
t_off
V_GS = 0~−2.5 V, R_G = 4.7 Ω
⎯
32
⎯
ns
⎯
37
⎯
V_DSF
I_D = 2.3A, V_GS = 0 V
(Note3)
⎯ 0.85 1.2
V
1
2007-11-01