SSM3J109TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications

SSM3J109TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8 V drive
• Low ON-resistance: R_on = 300 mΩ (max) (@V_GS = -1.8 V)
R_on = 172 mΩ (max) (@V_GS = -2.5 V)
R_on = 130 mΩ (max) (@V_GS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DS
-20
V
Gate-source voltage
V_GSS
±8
V
Drain current
DC
I_D
Pulse
I_DP
-2
A
-4
Drain power dissipation
P_D (Note 1)
800
mW
P_D (Note 2)
500
Channel temperature
Storage temperature
T_ch
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on a ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm²)
Note 2: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
1
2
3
UFM
1. Gate
2. Source
3. Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_D = -1 mA, V_GS = 0
I_D = -1 mA, V_GS = +8 V
V_DS = -20 V, V_GS = 0
-20
⎯
⎯
V
-12
⎯
⎯
⎯
⎯
-10
μA
I_GSS V_GS = ±8 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = -3 V, I_D = -1 mA
-0.3
⎯
-1.0
V
⏐Y_fs⏐ V_DS = -3 V, I_D = -1 A
(Note 3) 2.4
4
⎯
S
R_{DS (ON)}
I_D = -1.0 A, V_GS = -4 V
I_D = -0.5 A, V_GS = -2.5 V
I_D = -0.2 A, V_GS = -1.8 V
(Note 3) ⎯
(Note 3) ⎯
(Note 3) ⎯
C_iss
V_DS = -10 V, V_GS = 0, f = 1 MHz
⎯
C_oss V_DS = -10 V, V_GS = 0, f = 1 MHz
⎯
C_rss
V_DS = -10 V, V_GS = 0, f = 1 MHz
⎯
91
130
123 172 ^mΩ
175 300
335
⎯
pF
70
⎯
pF
56
⎯
pF
t_on
V_DD = -10 V, I_D = -1A,
t_off
V_GS = 0 ~ -2.5 V, R_G = 4.7 Ω
⎯
20
⎯
ns
⎯
20
⎯
V_DSF I_D = 2 A, V_GS = 0
(Note 3)
⎯
0.85 1.2
V
1
2007-11-01