SSM3J05FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switch High Speed Switching Applications

SSM3J05FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J05FU
Power Management Switch
High Speed Switching Applications
· Small package
· Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V)
: Ron = 4.0 Ω (max) (@VGS = −2.5 V)
· Low gate threshold voltage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
-20
V
V_GSS
±12
V
I_D
-200
mA
I_DP
-400
P_D
150
mW
(Note 1)
T_ch
150
°C
T_stg
-55~150
°C
Note 1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.6 mm² ´ 3)
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27