SSM3J02F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
SSM3J02F
Power Management Switch
High Speed Switching Applications
Unit: mm
· Small package
· Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V)
: Ron = 0.7 Ω (max) (@VGS = −2.5 V)
· Low gate threshold voltage
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Symbol
V_DS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
Marking
Rating
Unit
-30
V
±10
V
-600
mA
-1200
200
mW
150
°C
-55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27