SSM3J01T Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01T
SSM3J01T
Power Management Switch
High Speed Switching Applications
Unit: mm
· Small Package
· Low on Resistance: Ron = 0.4 Ω (max) (@VGS = −4 V)
: Ron = 0.6 Ω (max) (@VGS = −2.5 V)
· Low Gate Threshold Voltage
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
-30
V
V_GSS
±10
V
I_D
-1.7
I_DP
(Note2)
-3.4
A
P_D
(Note1)
1250
mW
T_ch
150
°C
T_stg
-55~150
°C
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm², t = 10 s)
Note 2: The pulse width limited by max channel temperature.
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account.
Marking
Equivalent Circuit
3
3
DE
1
2
1
2
1
2002-01-16