SM3GZ47 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM3GZ47,SM3JZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3GZ47,SM3JZ47
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S ON−State Current
: IT (RMS) = 3A
l High Commutating (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off−State Voltage
SM3GZ47
SM3JZ47
R.M.S On−State Current
(Full Sine Waveform Tc = 110°C)
V_DRM
I_{T (RMS)}
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I²t Limit Value (t = 1~10ms)
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
V_ISOL
RATING
400
600
3
30 (50Hz)
33 (60Hz)
4.5
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1A
Note 1: di / dt test condition
V_DRM = 0.5×Rated
I_TM ≤ 4.5A
t_gw ≥ 10µs
t_gr ≤ 250ns
i_gp = I_GT×2.0
1
2001-07-13