SM2LZ47 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM2LZ47
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2LZ47
AC POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 800V
l R.M.S. On−State Current
: IT (RMS) = 2A
l High Commutation (dv / dt)
: (dv / dt) c = 5V / µs (Min.)
l Isolation Voltage
: VISOL = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off−State Voltage
R.M.S. On−State Current
(Full Sine Waveform)
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
V_DRM
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
I_GM
T_j
T_stg
V_ISOL
800
2
8 (50Hz)
8.8 (60Hz)
0.32
50
3
0.3
10
1.6
−40~125
−40~125
1500
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
Note: di / dt test condition
V_DRM = 400V, I_TM ≤ 3A, t_gw ≥ 10µs, t_gr ≤ 250ns, i_gp = I_GT × 2.0
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1A
1
2001-07-10