SM2GZ47 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
AC POWER CONTROL APPLICATIONS
l IT (RMS) = 1A (Ta = 65°C without radiator)
l Gate Trigger Current
: IGT = 5mA Max. (TYPE “A”)
l Repetitive Peak Off−State Voltage : VDRM = 400V, 600V
l R.M.S On−State Current
: IT (RMS) = 2A (Tc = 110°C)
l Isolation Voltage
: VISOL = 1500V (AC, t = 60s)
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
R.M.S On−State
Current
(Full Sine Waveform)
SM2GZ47
SM2GZ47A
SM2JZ47
SM2JZ47A
Tc = 110°C
Ta = 65°C
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
SYMBOL
V_DRM
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
I_GM
T_j
T_stg
V_ISOL
RATING
400
600
2
1
8 (50Hz)
8.8 (60Hz)
0.32
3
0.3
10
1.6
−40~125
−40~125
1500
UNIT
V
A
A
A²s
W
W
V
A
°C
°C
V
JEDEC
―
JEITA
―
TOSHIBA
13−10H1A
Weight: 1.7g (Typ.)
MARKING
NUMBER
*1
*2
TYPE
SYMBOL
SM2GZ47, SM2GZ47A
SM2JZ47, SM2JZ47A
SM2GZ47A, SM2JZ47A
MARK
M2GZ47
M2JZ47
A
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
1
2001-07-10