SM16GZ51 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM16GZ51,SM16JZ51
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ51,SM16JZ51
AC POWER CONTROL APPLICATIONS
l Repetitive Peak off−State Voltage : VDRM = 400, 600 V
l R.M.S On−State Current
: IT (RMS) = 16 A
l High Commutating (dv / dt)
: (dv / dt) c = 10 V / µs
l Isolation Voltage
: VISOL = 1500 V AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Off−State Voltage
SM16GZ51
SM16JZ51
R. M. S. On−tate Current
(Full Sine Waveform Ta = 82°C)
Peak One Cylce Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
V_DRM
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
V_ISOL
400
600
16
150 (50 Hz)
165 (60 Hz)
112.5
50
5
0.5
10
2
−40~125
−40~125
1500
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
Note 1: di / dt test condition
V_DRM = 0.5 × Rated, I_TM ≤ 25 A, t_gw ≥ 10 µs, t_gr ≤ 250 ns, i_gp = I_GT × 2.0
―
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13−16A1A
1
2001-07-10