SM12JZ47A Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – AC POWER CONTROL APPLICATIONS

SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 12A
l High Commutating (dv / dt)
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A
R. M. S. On−tate Current
(Full Sine Waveform TC = 72°C)
V_DRM
I_{T (RMS)}
Peak One Cylce Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
I_GM
T_j
T_stg
V_Isol
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1A
Note 1: di / dt test condition
V_DRM = 0.5 × Rated
I_TM ≤ 17A
t_gw ≥ 10µs
t_gr ≤ 250ns
i_gp = I_GT × 2.0
1
2001-07-10