SM12G45 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM12G45,SM12J45,SM12G45A,SM12J45A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G45,SM12J45,SM12G45A,SM12J45A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 12A
l High Commutating (dv / dt)
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM12G45
SM12G45A
SM12J45
SM12J45A
R.M.S On−State Current
(Full Sine Waveform Tc = 98°C)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value (t = 1~10ms)
Critical Rate of Rise of On−State
Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_GM
I_GM
T_j
T_stg
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A²s
A / µs
W
W
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
TO−220AB
―
13−10G1A
1
2001-07-13