SF8GZ47 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA THYRISITOR SILICON PLANAR TYPE

SF8GZ47,SF8JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8GZ47,SF8JZ47
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak off−State Voltage
Repetitive Peak Reverse Voltage
l Average On−State Current
l Isolation Voltage
: VDRM = 400, 600V
: VRRM = 400, 600V
: IT (AV) = 8A
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak
Off−State Voltage
and Repetitive Peak6
Reverse Voltage
SF8GZ47
SF8JZ47
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive <5ms,
T_j = 0~125°C)
SF8GZ47
SF8JZ47
Average On−State Current
(Half Sine Waveform Tc = 72°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
V_ISOL
400
600
500
720
8
12.6
120 (50 Hz)
132 (60 Hz)
72
100
5
0.5
10
−5
2
−40~125
−40~125
1500
Note 1: di / dt test condition,
V_DRM = 0.5 × Rated, I_TM ≤ 25A, t_gw ≥ 10µs,
t_gr ≤ 250ns, i_gp = I_GT × 2.0
UNIT
V
V
A
A
A
A²s
A / µs
W
W
V
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1B
1
2001-07-13