SF8G41A Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – MEDIUM POWER CONTROL APPLICATIONS

SF8G41A,SF8J41A
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8G41A,SF8J41A
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
Repetitive Peak Reverse Voltage : VRRM = 400, 600V
l Average On−State Current
: IT (AV) = 8A
l Gate Trigger Current
: IGT = 15mA (MAX.)
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SF8G41A
SF8J41A
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<5ms,
T_j = 0~125°C)
SF8G41A
SF8J41A
Average On−State Current
(Half Sine Waveform Tc = 83°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Curret
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
RATING
400
600
500
720
8
12.6
120 (50Hz)
132 (60Hz)
72
100
5
0.5
10
−5
2
−40~125
−40~125
UNIT
V
V
A
A
A
A²s
A / µs
W
W
V
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2g
TO−220AB
―
13−10G1B
1
2001-07-13