SF5G42 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – SILICON PLANAR TYPE (MEDIUM POWER CONTROL APPLICATIONS)

SF5G42,SF5J42
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF5G42,SF5J42
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
Repetitive Peak Reverse Voltage : VRRM = 400, 600V
l Average On−State Current
: IT(AV) = 5A
l JEDEC TO−220AB Package.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
(RGK = 330Ω)
SF5G42
SF5J42
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive<5ms,
Tj = 0~125°C,
RGK = 330Ω)
SF5G42
SF5J42
Average On−State Current
(Half Sine Waveform Tc = 91°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
400
600
500
720
5
7.8
80 (50Hz)
88 (60Hz)
32
0.5
0.05
5
−5
200
−40~125
−40~125
Note: Should be used with gate resistance as follows.
UNIT
V
V
A
A
A
A²s
W
W
V
V
mA
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2g
TO−220AB
―
13−10G1B
1
2001-07-10