SF25GZ51 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – MEDIUM POWER CONTROL APPLICATIONS

SF25GZ51,SF25JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF25GZ51,SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
Unit in mm
l Repetitive Peak Off−State Voltage : VDRM = 400, 600 V
Repetitive Peak Reverse Voltage : VRRM = 400, 600 V
l Average On−State Current
: IT (AV) = 25 A
l Isolation Voltage
: VIsol = 1500 V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Off−State Voltage and
Repetitive Peak Reverse
Voltage
SF25GZ51
SF25JZ51
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive < 5 ms,
T_j = 0~125°C)
SF25GZ51
SF25JZ51
Average On−State Current
(Half Sine Waveform)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I²t Limit Value
Critical Rate of Rise of On−State
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
V_Isol
400
600
500
720
25
39
350 (50 Hz)
385 (60 Hz)
612
100
5
0.5
10
-5
2
-40~125
-40~125
1500
V
V
A
A
A
A²s
A / µs
W
W
V
V
A
°C
°C
V
Note : di / dt Test Condition, i_G = 30mA, t_gw = 10µs, t_gr ≤ 250ns
JEDEC
EIAJ
TOSHIBA
Weight : 5.9g
―
―
13−16A1B
1
2001-05-10