SF10G41A Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF10G41A,SF10J41A
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF10G41A,SF10J41A
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak Off−State Voltage : VDRM = 400,600V
Repetitive Peak Reverse Voltage : VRRM = 400,600V
l Average On−State Current
: IT (AV) = 10A
l Gate Trigger Current
: IGT = 15mA (Max.)
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SF10G41A
SF10J41A
Non−Repetitive Peak
Reverse Voltage
(Non-Repetitive<5ms,
T_j = 0~125°C)
SF10G41A
SF10J41A
Average On−State Current
(Half Sine Waveform Tc = 79°C)
R.M.S On−State Current
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I²t Limit Value
Critical Rate of Rise of On-State
Curret
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
di / dt
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
RATING
400
600
500
720
10
16
160 (50Hz)
176 (60Hz)
125
100
5
0.5
10
−5
2
−40~125
−40~125
UNIT
V
V
A
A
A
A²s
A / µs
W
W
V
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2g
TO−220AB
SC−46
13−10G1B
1
2001-07-10