SF0R5G43 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF0R5G43,SF0R5J43
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R5G43,SF0R5J43
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400,600V
Repetitive Peak Reverse Voltage : VRRM = 400,600V
l Average On−State Current
: IT (AV) = 500mA
l Plastic Mold Type.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
(R_GK = 1kΩ)
SF0R5G43
SF0R5J43
Non−Repetitive Peak
Reverse Voltage
(Non-Repetitive < 5ms,
R_GK = 1kΩ,
T_j = 0~110°C)
SF0R5G43
SF0R5J43
Average On−State Current
(Half Sine Waveform Tc = 30°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I²t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
400
600
500
720
500
800
7 (50Hz)
8 (60Hz)
0.25
1
0.01
8
−5
500
−65~125
−65~125
Note: Should be used with gate resistance as follows.
UNIT
V
V
mA
mA
A
A²s
W
W
V
V
mA
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
Unit: mm
TO−92
SC−43
13−5A1D
1
2001-07-10