SF0R3G42 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – LOW POWER SWITCHING AND CONTROL APPLICATIONS

TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R3G42
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400V
Repetitive Peak Reverse Voltage : VRRM = 400V
l Average On−State Current
: IT (AV) = 300mA
l Plastic Mold Type.
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage
(R_GK = 1kΩ)
Non−Repetitive Peak Reverse
Voltage (Non-Repetitive<5ms,
R_GK = 1kΩ, T_j = 0 ~ 125°C)
Average On−State Current
(Half Sine Waveform Ta = 45°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I²t Limit Value
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
V_DRM
V_RRM
V_RSM
I_{T (AV)}
I_{T (RMS)}
I_TSM
I²t
P_GM
P_{G (AV)}
V_FGM
V_RGM
I_GM
T_j
T_stg
400
500
300
450
9 (50Hz)
9.9 (60Hz)
0.4
0.1
0.01
3.5
−5
125
−40~125
−40~125
Note: Should be used with gate resistance as follows.
UNIT
V
V
mA
mA
A
A²s
W
W
V
V
mA
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
SF0R3G42
Unit: mm
TO−92
SC−43
13−5A1A
1
2001-07-13